Beijing, China

Wenqing He


Average Co-Inventor Count = 1.0

ph-index = 1


Years Active: 2025

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1 patent (USPTO):Explore Patents

Title: Innovations of Wenqing He in Magnon Technology

Introduction: Wenqing He is a prominent inventor based in Beijing, China. He has made significant contributions to the field of magnon technology, particularly in the development of devices that utilize magnonic principles. His work has the potential to revolutionize electronic devices and memory storage solutions.

Latest Patents: Wenqing He holds 1 patent related to his innovative work. His patent encompasses a magnon junction, magnon random access memory, magnon microwave oscillator and detector, and an electronic device. The magnon junction consists of a first electrode layer made from non-magnetic conductive material, a free magnetic layer formed by ferromagnetic conductive material, and an antiferromagnetic barrier layer. This design allows for advanced functionalities in electronic devices, showcasing the potential of magnon technology.

Career Highlights: Throughout his career, Wenqing He has focused on the intersection of magnetism and electronics. His research has led to breakthroughs in the understanding and application of magnonic devices. His innovative approach has garnered attention in the scientific community, positioning him as a key figure in this emerging field.

Collaborations: Wenqing He has collaborated with notable colleagues, including Xiufeng Han and Leina Jiang. These partnerships have facilitated the advancement of research in magnon technology and have contributed to the successful development of his patented inventions.

Conclusion: Wenqing He is a distinguished inventor whose work in magnon technology is paving the way for future advancements in electronic devices. His contributions are significant and reflect the innovative spirit of modern science.

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