Company Filing History:
Years Active: 2017-2023
Title: Innovations of Wenping Geng in Ferroelectric Memory Technology
Introduction
Wenping Geng is a notable inventor based in Shanghai, China. He has made significant contributions to the field of ferroelectric memory technology. With a total of three patents to his name, Geng's work focuses on enhancing data retention and endurance in memory devices.
Latest Patents
One of Geng's latest patents is for a large current-readout ferroelectric single-crystal thin film memory. This invention includes a method of preparing and operating the memory. The technology features a non-destructive readout mechanism that allows for a greatly increased read current in an on-state. Additionally, it improves data retention performance and data endurance performance, making it a significant advancement in memory technology.
Career Highlights
Wenping Geng is affiliated with Fudan University, where he continues to engage in innovative research. His work has garnered attention for its potential applications in various electronic devices. Geng's expertise in ferroelectric materials has positioned him as a key figure in the development of next-generation memory solutions.
Collaborations
Geng has collaborated with notable colleagues, including Anquan Jiang and Jun Jiang. Their combined efforts contribute to the advancement of research in ferroelectric memory technologies.
Conclusion
Wenping Geng's contributions to ferroelectric memory technology highlight his innovative spirit and dedication to advancing electronic memory solutions. His patents reflect a commitment to improving data performance in modern technology.