The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 21, 2023
Filed:
Jun. 14, 2020
Applicant:
Fudan University, Shanghai, CN;
Inventors:
Anquan Jiang, Shanghai, CN;
Wenping Geng, Shanghai, CN;
Assignee:
Fudan University, Shanghai, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/22 (2005.12); H01L 27/11502 (2016.12); H01L 49/02 (2005.12); H10B 53/00 (2022.12);
U.S. Cl.
CPC ...
G11C 11/2275 (2012.12); G11C 11/22 (2012.12); G11C 11/2273 (2012.12); H01L 28/55 (2012.12); H01L 28/56 (2012.12); H10B 53/00 (2023.01);
Abstract
Disclosed is a non-destructive large current-readout ferroelectric single-crystal thin film memory as well as a method of preparing the ferroelectric memory and a method of operating the ferroelectric memory. The large current-readout ferroelectric single-crystal thin film memory comprises a ferroelectric storage layer, which is a ferroelectric single-crystal storage layer. The non-destructive readout ferroelectric memory has a greatly increased read current in an on-state, and moreover, the data retention performance and data endurance performance are improved.