Company Filing History:
Years Active: 2018
Title: Innovations of Inventor Wenjun Li
Introduction
Wenjun Li is a notable inventor based in South Bend, IN (US). He has made significant contributions to the field of semiconductor technology, particularly in the development of advanced transistor devices. With a total of 2 patents, his work is recognized for its innovative approaches and practical applications.
Latest Patents
Wenjun Li's latest patents focus on Group III-Nitride compound heterojunction tunnel field-effect transistors and methods for making the same. These tunnel field-effect transistor devices include a p-type GaN source layer, an n-type GaN drain layer, and an interlayer interfaced between the source layer and the drain layer. The devices utilize polarization engineering in GaN/InN heterojunctions to achieve appreciable interband tunneling current densities. In various examples, the interlayer may consist of an Indium Nitride (InN) layer or a graded Indium gallium nitride layer combined with an InN layer. Additionally, the devices can feature configurations such as in-line, side-wall, or nanowire cylindrical gate-all-around geometries to enhance gate electrostatic control.
Career Highlights
Wenjun Li is affiliated with the University of Notre Dame Du Lac, where he continues to advance research in semiconductor technologies. His work has garnered attention for its potential impact on electronic devices and systems.
Collaborations
Wenjun Li collaborates with esteemed colleagues, including Patrick Fay and Debdeep Jena, contributing to a dynamic research environment that fosters innovation and discovery.
Conclusion
Wenjun Li's contributions to the field of semiconductor technology through his patents and collaborations highlight his role as a leading inventor. His innovative work continues to shape the future of electronic devices and systems.