Saratoga Springs, NY, United States of America

Wenhe Lin

This inventor holds 2 USPTO granted patents and 1 published patent application. Top assignee: Globalfoundries Inc.. Active years: 2018-2019.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Wenhe Lin. Retrieved from https://idiyas.com/inventor/wenhe-lin-1p8fhj9w

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 2 

% Patents Active = 100.0

Average Co-Inventor Count = 5.1

ph-index = 1


Company Filing History:


Years Active: 2018-2019

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2 patents (USPTO):Explore Patents

Title: Innovations of Inventor Wenhe Lin

Introduction

Wenhe Lin is a notable inventor based in Saratoga Springs, NY (US). He has made significant contributions to the field of integrated circuit technology, holding 2 patents that showcase his innovative approaches.

Latest Patents

One of his latest patents is the "Middle of the line (MOL) contact formation method and structure." This patent discloses a method for forming an integrated circuit (IC) structure with robust metal plugs. The method involves forming openings in an interlayer dielectric layer to expose semiconductor device surfaces. These openings are lined with a two-layer liner, which includes conformal metal and barrier layers, and subsequently filled with a metal layer. Notably, the silicidation anneal is performed between the deposition of the two liner layers, which prevents the formation of microcracks in the conformal barrier layer. This innovation is crucial as it prevents any metal from the metal layer from protruding into the area between the two liner layers.

Another significant patent by Wenhe Lin is the "Field effect transistor structure with recessed interlayer dielectric and method." This patent discloses a field effect transistor (FET) and a method for its formation. In this FET, an interlayer dielectric (ILD) layer is positioned laterally adjacent to a sidewall spacer of a replacement metal gate. The ILD layer is polished and recessed, ensuring that its top surface is lower than the top surfaces of the sidewall spacer and the gate. This design prevents shorts between the gate and subsequently formed contacts to the FET source/drain regions.

Career Highlights

Wenhe Lin is currently employed at GlobalFoundries Inc., where he continues to innovate in semiconductor technology. His work has significantly impacted the efficiency and reliability of integrated circuits.

Collaborations

Wenhe Lin has collaborated with notable coworkers such as Sipeng Gu and Xusheng Kevin Wu, contributing to advancements in their field.

Conclusion

Wenhe Lin's contributions to integrated circuit technology through his innovative patents demonstrate his expertise and commitment to advancing the field. His work continues to influence the development of more efficient semiconductor devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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