Wengao Chen

Title: Wengao Chen: Innovator in Semiconductor Technology

Introduction

Wengao Chen is a prominent inventor based in Suzhou, China. He has made significant contributions to the field of semiconductor technology. His innovative work has led to the development of a unique semiconductor device that enhances performance and efficiency.

Latest Patents

Wengao Chen holds 1 patent for his invention titled "Semiconductor device with a current sampler and a start-up structure." This semiconductor device comprises first, second, and third high-voltage transistors, along with a resistor. The design features a drain terminal of the first transistor connected to the drain terminals of the second and third transistors, as well as one end of the resistor. The source terminal of the first transistor is grounded, and its gate terminal is linked to the gate terminal of the second transistor. The other end of the resistor connects to the gate terminal of the third transistor. Notably, the resistor is wound and formed in a common voltage withstand region of the transistors or in the voltage withstand region of the first or third transistor only.

Career Highlights

Wengao Chen is currently employed at Suzhou Poweron IC Design Co., Ltd. His role at the company allows him to further explore and develop innovative semiconductor solutions. His work has garnered attention for its potential applications in various electronic devices.

Collaborations

Wengao collaborates with talented coworkers, including Yangbo Yi and Haisong Li. Their combined expertise contributes to the advancement of semiconductor technologies within their organization.

Conclusion

Wengao Chen's contributions to semiconductor technology exemplify the spirit of innovation. His patent for a semiconductor device showcases his ability to address complex challenges in the field. As he continues to work at Suzhou Poweron IC Design Co., Ltd., his future endeavors are likely to yield further advancements in technology.