Taoyuan, Taiwan

Weng Ming Liu


Average Co-Inventor Count = 2.0

ph-index = 1

Forward Citations = 38(Granted Patents)


Company Filing History:


Years Active: 2001-2002

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2 patents (USPTO):Explore Patents

Title: Weng Ming Liu: Innovator in Compound Semiconductor Technology

Introduction

Weng Ming Liu is a prominent inventor based in Taoyuan, Taiwan. He has made significant contributions to the field of compound semiconductors, holding two patents that showcase his innovative approach to technology.

Latest Patents

Weng Ming Liu's latest patents include an "Electrode structure of compound semiconductor device" and a "Method of producing gallium nitride-based III-V Group compound semiconductor device." The first patent describes an electrode structure that features a substrate, an n-type layer, a mesa-like p-type layer, a transparent conductive layer, and both p-contact and n-contact configurations. This design ensures uniform current flow from the p-contact to the n-contact. The second patent proposes a method for producing gallium nitride-based III-V Group compound semiconductor devices by diffusing beryllium ions into the p-type layer to enhance hole mobility, followed by the addition of low-impedance ohmic contact layers.

Career Highlights

Weng Ming Liu is currently employed at Arima Optoelectronics Corporation, where he continues to develop innovative semiconductor technologies. His work has been instrumental in advancing the capabilities of compound semiconductor devices.

Collaborations

Weng Ming Liu collaborates with Ying Che Sung, contributing to the development of cutting-edge technologies in the semiconductor field.

Conclusion

Weng Ming Liu's contributions to compound semiconductor technology through his patents and work at Arima Optoelectronics Corporation highlight his role as an influential inventor in the industry. His innovative approaches continue to shape the future of semiconductor devices.

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