Wuhan, China

Wenbo Zhang

USPTO Granted Patents = 1 

Average Co-Inventor Count = 6.0

ph-index = 1


Company Filing History:


Years Active: 2025

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1 patent (USPTO):Explore Patents

Title: The Innovations of Wenbo Zhang

Introduction

Wenbo Zhang is a prominent inventor based in Wuhan, China. He has made significant contributions to the field of memory devices, particularly in the development of three-dimensional NAND memory technology. His innovative work has led to the filing of a patent that showcases his expertise and creativity in this area.

Latest Patents

Wenbo Zhang holds a patent for a three-dimensional memory device and its fabrication method. This patent describes a process that includes forming a conductor/insulator stack over a substrate, creating a dielectric layer of a dielectric material that includes atomic hydrogen, and performing a thermal process to release and diffuse the atomic hydrogen into the conductor/insulator stack. This advancement in 3D NAND memory devices is crucial for enhancing memory storage capabilities.

Career Highlights

Wenbo Zhang is currently employed at Yangtze Memory Technologies Co., Ltd. His role at the company allows him to work on cutting-edge technologies that push the boundaries of memory device innovation. His dedication to research and development has positioned him as a key figure in the industry.

Collaborations

Wenbo has collaborated with notable colleagues, including Zhiyong Lu and Sheng Peng. These partnerships have fostered a creative environment that encourages the exchange of ideas and the development of groundbreaking technologies.

Conclusion

Wenbo Zhang's contributions to the field of memory devices exemplify the spirit of innovation. His patent for a three-dimensional memory device highlights his commitment to advancing technology in this critical area. His work continues to influence the future of memory storage solutions.

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