Wen Yuan Guo

Title: Innovations of Wen Yuan Guo in Thin Film Transistor Technology

Introduction

Wen Yuan Guo is a notable inventor based in Chiayi, Taiwan. He has made significant contributions to the field of thin film transistor (TFT) technology, holding 2 patents that showcase his innovative approaches.

Latest Patents

Guo's latest patents include a process for producing thin film transistors with a lightly doped drain (LDD) region. This process involves patterning a polysilicon layer to define multiple TFT regions, where doping materials are implanted to create doped regions and channel regions. The method also details the formation of gate structures over these regions, enhancing the performance of TFT displays. Another patent focuses on a thin film transistor display that integrates a driving circuit and an active matrix, featuring multiple LDD regions and channel regions, which are crucial for efficient display technology.

Career Highlights

Throughout his career, Wen Yuan Guo has worked with prominent companies in the optoelectronics sector, including TPO Displays Corporation and Toppoly Optoelectronics Corporation. His experience in these organizations has allowed him to refine his expertise in TFT technology and contribute to advancements in display systems.

Collaborations

Guo has collaborated with several professionals in his field, including An Shih and Chao-Yu Meng, who have contributed to his projects and innovations.

Conclusion

Wen Yuan Guo's work in thin film transistor technology exemplifies his innovative spirit and dedication to advancing display technology. His patents reflect a deep understanding of the complexities involved in TFT production and design.