Hsinchu, Taiwan

Wen-Yen Liu


Average Co-Inventor Count = 3.0

ph-index = 1


Company Filing History:


Years Active: 2009-2010

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2 patents (USPTO):Explore Patents

Title: Innovations of Wen-Yen Liu

Introduction

Wen-Yen Liu is a notable inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of memory technology, particularly in the development of devices that enhance the efficiency of ternary content addressable memory (TCAM). With a total of 2 patents, Liu's work focuses on reducing leakage current in memory devices, which is crucial for improving performance and energy efficiency.

Latest Patents

Liu's latest patents include a "Leakage current cut-off device for ternary content addressable memory." This invention provides a solution for managing the storage cell's modes, including active, data-retention, and cut-off modes. By applying a multi-mode data retention power gating device, the invention effectively reduces leakage current during data-retention and cut-off modes while supporting full-speed operation in active mode. Another significant patent is the "Super leakage current cut-off device for ternary content addressable memory." This device utilizes high-end and low-end power gating control transistors to manage the don't-care cells, thereby minimizing leakage current during various operations of the TCAM.

Career Highlights

Wen-Yen Liu is affiliated with National Yang Ming Chiao Tung University, where he continues to advance research in memory technology. His innovative approaches have garnered attention in the academic and technological communities, contributing to the evolution of memory devices.

Collaborations

Liu has collaborated with several esteemed colleagues, including Po-Tsang Huang and Wei Hwang. These partnerships have fostered a collaborative environment that enhances research outcomes and drives innovation in their field.

Conclusion

Wen-Yen Liu's contributions to the field of ternary content addressable memory through his innovative patents demonstrate his commitment to advancing technology. His work not only addresses current challenges in memory efficiency but also paves the way for future developments in the industry.

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