Company Filing History:
Years Active: 2016
Title: Innovations of Wen-xia Zuo in IGZO Layer Fabrication
Introduction
Wen-xia Zuo is a notable inventor based in Shanghai, China. He has made significant contributions to the field of semiconductor technology, particularly in the fabrication of IGZO (Indium Gallium Zinc Oxide) layers and thin-film transistors (TFTs). His innovative methods have the potential to enhance the performance and stability of electronic devices.
Latest Patents
Wen-xia Zuo holds a patent for a method of fabricating an IGZO layer and TFT. The patent outlines a process that includes several key steps: first, depositing an IGZO layer and forming a surface oxidizing gas protective layer on it. Next, the IGZO layer is coated with a photoresist, which undergoes an exposing and developing process to create a photoresist pattern. Finally, the IGZO layer is subjected to an etching process, followed by the removal of the photoresist. This method effectively reduces the impact of hydrogen atoms on the IGZO layer, preventing its transition from a semiconductor to a conductor. As a result, the stability of the IGZO layer and the TFT is improved, which also mitigates the negative bias of threshold voltage that can occur with prolonged device use.
Career Highlights
Wen-xia Zuo is currently employed at Everdisplay Optronics (Shanghai) Limited, where he continues