The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 14, 2016
Filed:
Jun. 27, 2014
Everdisplay Optronics (Shanghai) Limited, Shanghai, CN;
Chia-chi Huang, Shanghai, CN;
Min-ching Hsu, Shanghai, CN;
Hsueh-ming Tsai, Shanghai, CN;
Wen-xia Zuo, Shanghai, CN;
EverDisplay Optronics (Shanghai) Limited, Shanghai, CN;
Abstract
Methods for fabricating an IGZO layer and fabricating TFT are provided in the present invention. The method for fabricating TFT includes the following steps: (1) depositing an IGZO layer and forming a surface oxidizing gas protective layer on the IGZO layer; (2) coating the IGZO layer with a photoresist, and then subjecting the photoresist to an exposing and developing process to form a photoresist pattern; and (3) subjecting the IGZO layer to an etching process, and then removing the photoresist. By forming an oxidizing gas protective layer, the present methods for fabricating an IGZO layer and fabricating TFT can effectively reduce the effect of hydrogen atom on IGZO layer and avoid the change of IGZO layer from semiconductor to conductor, thereby improving the stability of the IGZO layer and thus the TFT, and reducing the negative bias of threshold voltage generated by the long-term continuous use of the device.