Toufen, Taiwan

Wen-Sheng Lin

This inventor holds 1 USPTO granted patent. Top assignee: Hermes-Epitek Corporation. Active years: 2013.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Wen-Sheng Lin. Retrieved from https://idiyas.com/inventor/wen-sheng-lin-1hp7sfii

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 5.0

ph-index = 1


Company Filing History:


Years Active: 2013

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1 patent (USPTO):Explore Patents

Title: Innovations of Wen-Sheng Lin

Wen-Sheng Lin is a notable inventor based in Toufen, Taiwan. He has made significant contributions to the field of electrode structures, particularly in enhancing their performance under high applied voltages. His innovative approach has led to the development of a unique electrode structure that minimizes the risk of arcing.

Latest Patents

Wen-Sheng Lin holds a patent for an "Electrode structure adapted for high applied voltage and fabrication method thereof." This invention features a conductive plate substrate with a covering layer that exceeds 50% coverage. The design ensures that the area of the conductive plate substrate covered by the layer is larger than the exposed area, effectively reducing the possibility of arcing and allowing for a higher breakdown voltage.

Career Highlights

Wen-Sheng Lin is associated with Hermes-Epitek Corporation, where he applies his expertise in developing advanced technologies. His work has been instrumental in pushing the boundaries of electrode design, contributing to improved performance in various applications.

Collaborations

Wen-Sheng Lin collaborates with talented individuals such as Chen Hsu and Chih-Ming Hu, who contribute to the innovative environment at Hermes-Epitek Corporation. Their combined efforts foster a culture of creativity and technological advancement.

Conclusion

Wen-Sheng Lin's contributions to the field of electrode structures demonstrate his commitment to innovation and excellence. His patent reflects a significant advancement in technology, showcasing the potential for improved performance in high-voltage applications.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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