Hsinchu, Taiwan

Wen-Hsin Yen

This inventor holds 1 USPTO granted patent. Top assignee: Industrial Technology Research Institute. Active years: 2006.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Wen-Hsin Yen. Retrieved from https://idiyas.com/inventor/wen-hsin-yen

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 5.0

ph-index = 1


Company Filing History:


Years Active: 2006

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1 patent (USPTO):Explore Patents

Title: Innovations of Wen-Hsin Yen

Introduction

Wen-Hsin Yen is a notable inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of optical recording technology. His innovative work has led to the development of a unique optical recording medium.

Latest Patents

Wen-Hsin Yen holds a patent for a write-once optical recording medium. This optical recording medium consists of a dielectric layer, a recording layer, and a reflective layer, which are stacked on a substrate in a specific order. The recording layer contains mixed nickel oxides that decompose to release gas and become transparent upon heating. This invention showcases his expertise in materials science and optical engineering.

Career Highlights

Wen-Hsin Yen is affiliated with the Industrial Technology Research Institute, where he has been involved in various research projects. His work has contributed to advancements in optical media technology, enhancing data storage solutions.

Collaborations

Wen-Hsin Yen has collaborated with notable colleagues, including Hung-Lu Chang and Jung-Po Chen. These partnerships have fostered innovation and development in their respective fields.

Conclusion

Wen-Hsin Yen's contributions to optical recording technology exemplify his innovative spirit and dedication to advancing the field. His patent for a write-once optical recording medium highlights the importance of research and collaboration in driving technological progress.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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