Hsinchu, Taiwan

Wen-Chin Li


Average Co-Inventor Count = 6.0

ph-index = 1


Company Filing History:


Years Active: 2006

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1 patent (USPTO):Explore Patents

Title: Innovations of Wen-Chin Li in Thin-Film Gas Diffusion Electrodes

Introduction

Wen-Chin Li is a notable inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of electrochemical technology, particularly through his innovative work on thin-film gas diffusion electrodes.

Latest Patents

Wen-Chin Li holds a patent for a thin-film gas diffusion electrode and the method for making the same. This patent describes a thin-film gas diffusion electrode (GDE) that is formed in a unitary way. A dual-nature porous thin film is utilized as the substrate. The method involves surface processing to create one hydrophilic surface and one hydrophobic surface. The hydrophilic area serves as the active layer for electrochemical reactions after chemical processing, while the hydrophobic area remains dry to form a smooth gas channel, functioning as a gas diffusion layer. Notably, this method eliminates the need for binders and high-temperature, high-pressure manufacturing processes.

Career Highlights

Wen-Chin Li is associated with the Industrial Technology Research Institute, where he continues to advance research and development in his field. His innovative approach to thin-film technology has the potential to enhance the efficiency of electrochemical systems.

Collaborations

Wen-Chin Li has collaborated with notable colleagues, including Shu-Chin Chou and Shinn-Horng Yeh, contributing to a dynamic research environment that fosters innovation.

Conclusion

Wen-Chin Li's work on thin-film gas diffusion electrodes represents a significant advancement in electrochemical technology. His innovative methods and collaborative efforts continue to influence the field positively.

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