The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 21, 2006
Filed:
Apr. 21, 2003
Wen-chin LI, Hsinchu, TW;
Shu-chin Chou, Hsinchu, TW;
Shinn-horng Yeh, Hsinchu, TW;
Kuan-liang Chen, Hsinchu, TW;
Kun-lung Hsien, Hsinchu, TW;
Min-lun Chen, Hsinchu, TW;
Wen-Chin Li, Hsinchu, TW;
Shu-Chin Chou, Hsinchu, TW;
Shinn-Horng Yeh, Hsinchu, TW;
Kuan-Liang Chen, Hsinchu, TW;
Kun-Lung Hsien, Hsinchu, TW;
Min-Lun Chen, Hsinchu, TW;
Industrial Technology Research Institute, Hsinchu, TW;
Abstract
This specification discloses a thin-film gas diffusion electrode (GDE) and the method for making the same. The thin-film GDE is formed in a unitary way. A dual-nature porous thin film is used as the substrate. A surface processing is performed to make one surface of the thing film hydrophlic while the other surface hydrophobic. The hydrophlic area serves as the active layer for electrochemical reactions after chemical processing. The hydrophobic area is kept dry to form a smooth gas channel, functioning as a gas diffusion layer. In this method, the thin-film GDE is free from the use of binders and high-temperature high-pressure manufacturing processes.