Company Filing History:
Years Active: 2014-2015
Title: Innovations of Wen Cheng Tien
Introduction
Wen Cheng Tien is a notable inventor based in Sichuan, China. He has made significant contributions to the field of semiconductor technology, particularly in the area of MOS devices. With a total of 2 patents, his work has garnered attention in the industry.
Latest Patents
One of his latest patents is titled "Multi-landing contact etching - A method for contacting MOS devices." This innovative method involves forming first openings in a photosensitive material over a substrate with a top dielectric in a first die area. Additionally, a second opening is created over a gate stack in a second die area, which also has the top dielectric, a hard mask, and a gate electrode. The process includes etching the top dielectric layer to form a semiconductor contact while also etching a portion of the hard mask layer thickness over a gate contact area exposed by the second opening. An inter-layer dielectric (ILD) is then deposited, and a photosensitive material is patterned to generate further openings. The ILD is etched through to reopen the semiconductor contact, ensuring a gate contact to the gate electrode.
Career Highlights
Wen Cheng Tien is currently employed at Texas Instruments Corporation, where he continues to innovate and develop new technologies. His work has been instrumental in advancing semiconductor manufacturing processes.
Collaborations
He has collaborated with notable coworkers, including Fei Xie and Ya Ping Chen, contributing to various projects and enhancing the research environment at Texas Instruments Corporation.
Conclusion
Wen Cheng Tien's contributions to semiconductor technology through his patents and work at Texas Instruments Corporation highlight his role as a significant inventor in the field. His innovative methods continue to influence the industry and pave the way for future advancements.