Wen-Chan Liu

Title: Innovations of Wen-Chan Liu in Semiconductor Technology

Introduction

Wen-Chan Liu is a notable inventor based in Tainan, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the development of high-performance transistors. His innovative work focuses on enhancing the efficiency and performance of electronic devices.

Latest Patents

Wen-Chan Liu holds a patent for a "Wide voltage operation regime double heterojunction bipolar transistor." This invention features a modified InGaP/GaAs double heterojunction bipolar transistor that operates over a broad collector-emitter voltage range. It is designed for high speed, low power consumption, and high breakdown voltage applications. The unique aspects of this invention include the incorporation of an In.sub.0.49 Ga.sub.0.51 P collector layer, a GaAs delta-doping sheet, and an undoped GaAs spacer in the collector zone. These features effectively eliminate potential spikes at the base-collector interface, thus preventing electron blocking effects. The emitter zone includes a five-period In.sub.0.49 Ga.sub.0.51 P/GaAs superlatticed confinement layer, which enhances emitter injection efficiency while lowering offset voltage.

Career Highlights

Wen-Chan Liu is affiliated with the National Science Council of the Republic of China, where he continues to advance research in semiconductor technologies. His work has been instrumental in developing transistors that meet the demands of both digital and analog circuits.

Collaborations

Wen-Chan Liu collaborates with Shiou-Ying Cheng, who is also involved in semiconductor research. Their partnership has contributed to the advancement of innovative technologies in their field.

Conclusion

Wen-Chan Liu's contributions to semiconductor technology, particularly through his patented inventions, highlight his role as a leading inventor in the industry. His work continues to influence the development of efficient electronic devices.