Weiya Xie

Title: Weiya Xie: Innovator in Semiconductor Testing

Introduction

Weiya Xie is a notable inventor based in Shanghai, China. He has made significant contributions to the field of semiconductor technology. His innovative approach has led to the development of a unique method for testing the lifetime of surface state carriers in semiconductors.

Latest Patents

Weiya Xie holds a patent titled "Method for testing lifetime of surface state carrier of semiconductor." This patent describes a method that includes several steps. First, a narrow pulse light source emits a light pulse, which is coupled to a near-field optical probe. This probe generates photon-generated carriers on the surface of the semiconductor material under test through excitation. Next, the excited carriers are concentrated on the surface, where they recombine continuously with a surface state acting as a recombination center. The process produces a change in the lattice constant due to an electronic volume effect, generating a stress wave that is detected using high-frequency broadband ultrasonic testing. Finally, fitting calculations on the stress wave signal yield the lifetime of the surface state carrier, denoted as 1 patent.

Career Highlights

Weiya Xie is affiliated with Tongji University, where he continues to advance research in semiconductor technologies. His work has garnered attention for its innovative methodologies and practical applications in the field.

Collaborations

Weiya collaborates with talented colleagues, including Qian Cheng and Ya Gao, who contribute to his research endeavors. Their combined expertise enhances the quality and impact of their work.

Conclusion

Weiya Xie's contributions to semiconductor testing exemplify the importance of innovation in technology. His patented method represents a significant advancement in understanding surface state carriers, showcasing his role as a leading inventor in this field.