Singapore, Singapore

Weiwei Lina Fang

This inventor holds 1 USPTO granted patent. Top assignees: Agency for Science, Technology and Research, National University of Singapore. Active years: 2013.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Weiwei Lina Fang. Retrieved from https://idiyas.com/inventor/weiwei-lina-fang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 5(Granted Patents)


Company Filing History:


Years Active: 2013

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1 patent (USPTO):Explore Patents

Title: Weiwei Lina Fang: Innovator in Memory Component Technology

Introduction

Weiwei Lina Fang is a notable inventor based in Singapore, recognized for his contributions to memory component technology. His innovative work has led to the development of a unique memory component that enhances the efficiency and functionality of electronic devices.

Latest Patents

Weiwei Lina Fang holds a patent for a "Memory component having an electrical contact free of a metal layer." This invention includes a storage component made of resistance changing material and an electrical contact that is coupled to the storage component. Notably, the electrical contact comprises silicide and is free of a metal layer, which distinguishes it from traditional memory components.

Career Highlights

Throughout his career, Weiwei Lina Fang has worked with prestigious institutions such as the National University of Singapore and the Agency for Science, Technology and Research. His experience in these organizations has significantly contributed to his expertise in the field of memory technology.

Collaborations

Weiwei has collaborated with esteemed colleagues, including Yee Chia Yeo and Rong Zhao, who have played a vital role in his research endeavors.

Conclusion

Weiwei Lina Fang's innovative contributions to memory component technology exemplify the impact of research and development in advancing electronic devices. His work continues to inspire future innovations in the field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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