Plymouth, United Kingdom

Weisin Tan


 

Average Co-Inventor Count = 6.0

ph-index = 1


Company Filing History:


Years Active: 2025

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3 patents (USPTO):Explore Patents

Title: Weisin Tan: Innovator in Epitaxial Crystalline Structures

Introduction

Weisin Tan is a notable inventor based in Plymouth, GB. He has made significant contributions to the field of semiconductor technology, particularly in the development of methods for forming strain relaxation layers in epitaxial crystalline structures. His innovative approach has implications for enhancing the performance of electronic devices.

Latest Patents

Weisin Tan holds a patent for a method titled "Strain relaxation layer." This patent describes a process that involves providing a crystalline template layer and forming multiple epitaxial crystalline layers with varying electrical conductivities. The method includes techniques such as electrochemical etching to create pores, enabling strain relaxation through plastic deformation. This invention is crucial for improving the efficiency and functionality of semiconductor devices.

Career Highlights

Weisin Tan is currently associated with Plessey Semiconductors Limited, where he applies his expertise in semiconductor technology. His work focuses on advancing the capabilities of epitaxial crystalline structures, which are essential for modern electronic applications. With a patent portfolio that includes 1 patent, he continues to push the boundaries of innovation in his field.

Collaborations

Weisin collaborates with talented professionals such as Andrea Pinos and Samir Mezouari. Their combined efforts contribute to the ongoing research and development initiatives at Plessey Semiconductors Limited.

Conclusion

Weisin Tan's contributions to the field of semiconductor technology through his innovative patent on strain relaxation layers highlight his role as a key inventor. His work not only enhances the performance of electronic devices but also showcases the importance of collaboration in driving technological advancements.

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