The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 23, 2025

Filed:

May. 28, 2021
Applicant:

Plessey Semiconductors Ltd, Plymouth, GB;

Inventors:

Andrea Pinos, Plymouth, GB;

Samir Mezouari, Plymouth, GB;

Weisin Tan, Plymouth, GB;

John Lyle Whiteman, Plymouth, GB;

Assignee:

Plessey Semiconductors Ltd, Plymouth Devon, GB;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H10H 20/855 (2025.01); H10H 20/841 (2025.01); H10H 20/857 (2025.01); H10H 20/01 (2025.01);
U.S. Cl.
CPC ...
H10H 20/855 (2025.01); H10H 20/841 (2025.01); H10H 20/857 (2025.01); H10H 20/034 (2025.01); H10H 20/0363 (2025.01); H10H 20/0364 (2025.01);
Abstract

A method of forming an optical device, the method comprising the steps of forming spacers on the substantially vertical sidewalls of a sacrificial mesa, the spacers being formed from a first electrically insulating, optically transparent material, and having an internal face contacting the mesa, and a second opposing external face; depositing a reflective, electrically conducting material so as to form a mirror layer on the external face of the spacers; removing the sacrificial mesa so as to form a pocket between the internal faces of the spacers; installing a die having substantially vertical sidewalls into the pocket between the internal faces of the spacers.


Find Patent Forward Citations

Loading…