Wuhan, China

Weirong Chen


 

Average Co-Inventor Count = 1.4

ph-index = 1

Forward Citations = 9(Granted Patents)


Company Filing History:


Years Active: 2019-2023

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5 patents (USPTO):Explore Patents

Title: Weirong Chen: Innovator in Memory Systems

Introduction

Weirong Chen is a prominent inventor based in Wuhan, China. He has made significant contributions to the field of memory systems, holding a total of five patents. His innovative work focuses on enhancing the efficiency and performance of memory technologies.

Latest Patents

Weirong Chen's latest patents include a memory system capable of reducing reading time. This invention features a bias circuit that comprises a first current generator, a second current generator, and a bit line bias generator. The first current generator is designed to produce a first replica charging current based on the charging current flowing through a voltage bias transistor. The second current generator generates a first replica cell current according to a cell current flowing through a common source transistor. The bit line bias generator is connected to a first page buffer and is responsible for generating a bit line bias voltage, which is supplied to the first page buffer based on a comparison of the first replica charging current and the first replica cell current.

Another notable patent by Chen is also a memory system aimed at reducing reading time. This system includes a charging current reproduce unit, a cell current reproduce unit, a current comparator, and a bit line bias generator. The charging current reproduce unit generates a charging reference voltage based on the charging current flowing through a voltage bias transistor. The cell current reproduce unit creates a cell reference voltage according to a cell current flowing through a common source transistor. The current comparator consists of a first current generator that produces a replica charging current based on the charging reference voltage, and a second current generator that generates a replica cell current based on the cell reference voltage. The bit line bias generator then generates a bit line bias voltage to control a page buffer for charging a bit line according to the difference between the replica charging current and the replica cell current.

Career Highlights

Weirong Chen is currently employed at Yangtze Memory Technologies Co., Ltd. His work at this company has been instrumental in advancing memory technology and improving the efficiency of memory systems.

Collaborations

One of his notable coworkers is Qiang Tang, with whom he has collaborated on various projects related to memory systems.

Conclusion

Weirong Chen's innovative contributions to memory technology have positioned him as a key figure in the field. His patents reflect a commitment to enhancing the performance of memory systems, making significant strides in reducing reading times

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