Weiqing Ma

Title: Weiqing Ma: Innovator in Trench Insulated-Gate Bipolar Transistors

Introduction

Weiqing Ma is a notable inventor based in Jiangsu, China. He has made significant contributions to the field of semiconductor technology, particularly in the development of Trench Insulated-Gate Bipolar Transistors (IGBTs). His innovative approach has led to advancements that enhance the performance and cost-effectiveness of these devices.

Latest Patents

Weiqing Ma holds a patent for a Trench Insulated-Gate Bipolar Transistor and its manufacturing method. This invention outlines a process that includes several key steps: preparing a semiconductor substrate, forming an epitaxial layer on one side, creating a gate and emitter on the opposite side, thinning the epitaxial layer to establish a collector region, and finally, metalizing the collector region. The method is designed to be cost-effective while ensuring high performance for the Trench IGBT.

Career Highlights

Weiqing Ma is currently employed at Wuxi China Resources Huajing Microelectronics Co., Ltd. His work at this company has allowed him to focus on the development of advanced semiconductor technologies. His expertise in IGBT technology has positioned him as a valuable asset in the field.

Collaborations

Weiqing Ma has collaborated with several professionals in his field, including Hongxiang Tang and Yongsheng Sun. These collaborations have contributed to the advancement of semiconductor technologies and the successful development of innovative products.

Conclusion

Weiqing Ma's contributions to the field of semiconductor technology, particularly through his patent for Trench Insulated-Gate Bipolar Transistors, highlight his role as an influential inventor. His work continues to impact the industry positively, showcasing the importance of innovation in technology.