Weigao Sun

Title: Weigao Sun: Innovator in Flexible Gallium Nitride Photodetectors

Introduction

Weigao Sun is a prominent inventor based in Beijing, China. He has made significant contributions to the field of photodetectors, particularly through his innovative work on flexible gallium nitride (GaN) devices. His research focuses on enhancing the performance and production efficiency of photodetectors, which are crucial in various applications.

Latest Patents

Weigao Sun holds a patent for a "Laser rapid fabrication method for flexible gallium nitride photodetector." This invention outlines a method that simplifies the fabrication process of flexible GaN photodetectors. The steps include bonding a flexible substrate to a GaN epitaxial wafer, adjusting the focal plane position of a light beam, and enabling scanning irradiation. The process culminates in the creation of a Ga metal nanoparticle/GaN film/flexible substrate structure, which enhances light absorption and response performance. This innovative approach is suitable for industrial production, making it a significant advancement in the field.

Career Highlights

Weigao Sun is affiliated with the Beijing University of Technology, where he continues to contribute to research and development in photodetector technology. His work has garnered attention for its potential applications in various industries, including telecommunications and environmental monitoring.

Collaborations

Weigao Sun collaborates with Lingfei Ji, who is also involved in research related to photodetectors. Their partnership enhances the scope and impact of their work in the field.

Conclusion

Weigao Sun's innovative contributions to flexible gallium nitride photodetectors demonstrate his commitment to advancing technology in this area. His patented methods not only simplify production but also significantly improve device performance.