Wei-Siang Yang

Title: Wei-Siang Yang: Innovator in Semiconductor Technology

Introduction

Wei-Siang Yang is a prominent inventor based in Changhua, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of 3 patents. His work focuses on innovative methods for manufacturing semiconductor devices, which are crucial for modern electronics.

Latest Patents

Wei-Siang Yang's latest patents include advancements in semiconductor devices and methods of manufacture. One of his notable inventions describes a method that involves forming a first fin and a second fin in a substrate. A low concentration source/drain region is epitaxially grown over these fins, with the material of the low concentration region containing less than 50% by volume of germanium. Additionally, a high concentration contact landing region is formed over the low concentration regions, with this region containing at least 50% by volume of germanium. The high concentration contact landing region has a thickness of at least 1 nm over the top surface of the low concentration source/drain region.

Career Highlights

Wei-Siang Yang is currently employed at Taiwan Semiconductor Manufacturing Company Limited, a leading firm in the semiconductor industry. His expertise and innovative approaches have positioned him as a key player in the development of advanced semiconductor technologies.

Collaborations

Throughout his career, Wei-Siang Yang has collaborated with notable colleagues, including Ming-Hua Yu and Kun-Mu Li. These partnerships have fostered a collaborative environment that enhances innovation and drives progress in semiconductor research.

Conclusion

Wei-Siang Yang's contributions to semiconductor technology exemplify the importance of innovation in the electronics industry. His patents and collaborative efforts continue to shape the future of semiconductor manufacturing.