Wei-Jing Wen

Title: Innovations by Wei-Jing Wen

Introduction

Wei-Jing Wen is a notable inventor based in Taipei, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the fabrication of memory devices. With a total of 2 patents, his work has advanced the efficiency and effectiveness of various processes in the industry.

Latest Patents

Wei-Jing Wen's latest patents include a process for the complete removal of TiN residue on dual damascene processes. This innovative method describes how electrical elements are formed on a silicon substrate, followed by the formation of an insulating layer. The insulating layer is partially etched to create metal contact windows, and a TiN barrier layer along with a tungsten metal layer is deposited. A two-stage CMP process is then performed to remove the metal and TiN barrier layers exposed outside the contact windows. Finally, a dry etching step using HCl/Cl₂ plasmas ensures that no TiN residues remain outside the contact windows.

Another significant patent is the self-aligned method of fabricating DRAM with improved capacitance. This solid-state memory fabrication method involves a self-alignment of the field plate and BL isolation process. It utilizes oxide-poly-oxide etching followed by oxidation or sidewall deposition to isolate the field plate and BL. The process employs a first etchant and a second etchant to etch the BL/N⁺ contact, achieving self-alignment and increasing the planar area of 2P.

Career Highlights

Wei-Jing Wen is currently associated with Mosel Vitelic Corporation, where he continues to innovate in semiconductor technology. His expertise in the field has led to advancements that benefit the industry and enhance memory device performance.

Collaborations

Some of his notable coworkers include G S Shiao and Min-Liang Chen, who have collaborated with him on various projects and patents.

Conclusion

Wei-Jing Wen's contributions to semiconductor technology through his patents demonstrate his innovative spirit and commitment to advancing the field. His work continues to influence the development of more efficient memory devices.