Wei-Hsien Lee

Title: Wei-Hsien Lee: Innovator in High Electron Mobility Transistors

Introduction

Wei-Hsien Lee is a prominent inventor based in Taipei County, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the development of high electron mobility transistors (HEMTs). His innovative work focuses on enhancing the performance and efficiency of these devices.

Latest Patents

Wei-Hsien Lee holds a patent for a method of sulfuration treatment for a strained InAlAs/InGaAs metamorphic high electron mobility transistor. This invention relates to a method of sulfuration treatment for InAlAs/InGaAs metamorphic high electron mobility transistors (MHEMTs). The sulfuration treatment is applied to the InAlAs/InGaAs MHEMT for a passivation treatment for the gate. This process aims to increase initial voltage, lower surface states, and decrease surface leakage current. As a result, the MHEMT can operate effectively in a range of high current density and high input power.

Career Highlights

Wei-Hsien Lee is affiliated with Chang Gung University, where he continues to advance research in semiconductor technologies. His work has garnered attention for its practical applications in improving electronic devices.

Collaborations

Wei-Hsien Lee has collaborated with notable colleagues, including Hsien-Chin Chiu and Liann-Be Chang. These partnerships have contributed to the advancement of research in the field of high electron mobility transistors.

Conclusion

Wei-Hsien Lee's innovative contributions to the field of high electron mobility transistors demonstrate his commitment to advancing semiconductor technology. His patent for the sulfuration treatment method highlights the potential for improved performance in electronic devices.