The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 11, 2010
Filed:
Mar. 12, 2007
Hsien-chin Chiu, Taipei, TW;
Liann-be Chang, Taoyuan County, TW;
Yuan-chang Huang, Taichung, TW;
Chung-wen Chen, Taipei County, TW;
Wei-hsien Lee, Taipei County, TW;
Hsien-Chin Chiu, Taipei, TW;
Liann-Be Chang, Taoyuan County, TW;
Yuan-Chang Huang, Taichung, TW;
Chung-Wen Chen, Taipei County, TW;
Wei-Hsien Lee, Taipei County, TW;
Chang Gung University, Tao-Yuan, TW;
Abstract
This invention relates to a method of sulfuration treatment for InAlAs/InGaAs metamorphic high electron mobility transistor (MHEMT), and the sulfuration treatment is applied to the InAlAs/InGaAs MHEMT for a passivation treatment for Gate, in order to increase initial voltage, lower the surface states and decrease surface leakage current, which makes the MHEMT work in a range of high current density and high input power.