Tsukuba, Japan

Wei Feng

This inventor holds 1 USPTO granted patent. Top assignee: National Institute of Advanced Industrial Science and Technology. Active years: 2017.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Wei Feng. Retrieved from https://idiyas.com/inventor/wei-feng-rfdelwf9

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:


Years Active: 2017

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1 patent (USPTO):Explore Patents

Title: Innovations of Wei Feng in Semiconductor Technology

Introduction

Wei Feng is a notable inventor based in Tsukuba, Japan. He has made significant contributions to the field of semiconductor technology, particularly through his innovative patent that enhances electrical characteristics and mechanical reliability.

Latest Patents

Wei Feng holds a patent for a through electrode, along with its manufacturing method and a semiconductor device. This invention provides a method that does not require the removal of a side-wall insulating film formed at the bottom part of the through hole. The through electrode is designed to be integrated into a semiconductor substrate and includes a conductive layer, a side-wall insulating film, and a tubular semiconductor layer. This design aims to improve the overall performance of semiconductor devices.

Career Highlights

Wei Feng is affiliated with the National Institute of Advanced Industrial Science and Technology, where he continues to advance his research and development in semiconductor technologies. His work has been instrumental in pushing the boundaries of what is possible in this field.

Collaborations

Wei Feng has collaborated with esteemed colleagues such as Masahiro Aoyagi and Tung Thanh Bui. Their combined expertise contributes to the innovative projects at their institution.

Conclusion

Wei Feng's contributions to semiconductor technology through his patent demonstrate his commitment to innovation and excellence in the field. His work continues to influence advancements in semiconductor devices and manufacturing methods.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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