Singapore, Singapore

Wee Shong Chin

This inventor holds 1 USPTO granted patent. Top assignee: National University of Singapore. Active years: 2007.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Wee Shong Chin. Retrieved from https://idiyas.com/inventor/wee-shong-chin

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2007

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1 patent (USPTO):Explore Patents

Title: Innovations of Wee Shong Chin in Metal Chalcogenide Particles

Introduction

Wee Shong Chin is a notable inventor based in Singapore, recognized for his contributions to the field of materials science. He has developed a unique method for preparing metal chalcogenide particles, which has significant implications in various technological applications.

Latest Patents

One of his key patents is titled "Method of preparing metal chalcogenide particles." This innovative method involves the reaction of an amine with metal complex precursors, which include a chalcogenide and an electrophilic group. The process results in the formation of metal chalcogenide particles that are substantially free of the electrophilic group, enhancing their utility in various applications. He holds 1 patent related to this invention.

Career Highlights

Wee Shong Chin is affiliated with the National University of Singapore, where he contributes to research and development in materials science. His work has garnered attention for its potential to advance the understanding and application of metal chalcogenides in technology.

Collaborations

Throughout his career, he has collaborated with esteemed colleagues such as Zhihua Zhang and Wen Pei Lim, further enriching the research environment at his institution.

Conclusion

Wee Shong Chin's innovative approach to preparing metal chalcogenide particles exemplifies the impact of research in materials science. His contributions continue to influence the field and inspire future advancements.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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