Company Filing History:
Years Active: 2017
Title: Wayne Byran Grabowski: Innovator in Vertical Transistor Technology
Introduction
Wayne Byran Grabowski is a notable inventor based in Los Altos, California. He has made significant contributions to the field of semiconductor technology, particularly in the development of vertical power transistors. His innovative work has led to the granting of a patent that showcases his expertise and creativity in this area.
Latest Patents
Wayne Grabowski holds a patent for a "Vertical transistor device structure with cylindrically-shaped regions." This invention involves a vertical power transistor device that includes a semiconductor layer of a first conductivity type. The design features a plurality of cylindrically-shaped dielectric regions that extend vertically from the top surface of the semiconductor layer downward. These regions are laterally separated by a narrow region of the semiconductor layer, allowing for enhanced performance and efficiency in power applications.
Career Highlights
Grabowski is currently employed at Power Integrations, Inc., where he continues to push the boundaries of semiconductor technology. His work has been instrumental in advancing the capabilities of power transistors, making them more efficient and reliable for various applications.
Collaborations
Throughout his career, Wayne has collaborated with talented individuals such as Sorin Stefan Georgescu and Kamal Raj Varadarajan. These collaborations have fostered an environment of innovation and creativity, contributing to the success of their projects.
Conclusion
Wayne Byran Grabowski is a distinguished inventor whose work in vertical transistor technology has made a significant impact in the field of semiconductors. His patent and ongoing contributions at Power Integrations, Inc. highlight his dedication to innovation and excellence.