This inventor holds 1 USPTO granted patent. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2013.
Company Filing History:
Years Active: 2013
Title: Innovations of WangXiao Quan in Semiconductor Technology
Introduction
WangXiao Quan is a notable inventor based in Yongin, South Korea. He has made significant contributions to the field of semiconductor technology, particularly through his innovative patent that addresses the challenges associated with strain layers in semiconductor devices.
Latest Patents
WangXiao Quan holds a patent for a semiconductor device structure with a strain layer. This invention provides a method of fabricating a semiconductor device that can effectively reduce loading effects. By strategically arranging active dummies and gate dummies to avoid overlap, the design secures the area of the active dummy on which a strain layer dummy will be formed. This innovative approach significantly minimizes the loading effect, enhancing the performance of semiconductor devices.
Career Highlights
WangXiao Quan is currently employed at Samsung Electronics Co., Ltd., a leading company in the technology sector. His work at Samsung has allowed him to be at the forefront of semiconductor research and development, contributing to advancements that have a wide-ranging impact on the industry.
Collaborations
WangXiao Quan has collaborated with esteemed colleagues such as Heon-jong Shin and Hyun-min Choi. These partnerships have fostered a creative environment that encourages innovation and the development of cutting-edge technologies.
Conclusion
WangXiao Quan's contributions to semiconductor technology exemplify the importance of innovation in enhancing device performance. His patent for a semiconductor device structure with a strain layer showcases his commitment to advancing the field.