Wang Haiting

Title: Inventor Profile: Wang Haiting

Introduction

Wang Haiting is an innovative inventor based in Clifton Park, New York, recognized for his contributions to the field of semiconductor fabrication. With a commitment to advancing technology, he has secured a patent that significantly enhances the manufacturing process of devices.

Latest Patents

Wang has been granted a patent for his invention titled "Method and device to achieve self-stop and precise gate height". This invention addresses the challenges associated with achieving low gate height variation and creating a substantially planar topography in replacement metal gate (RMG) devices. The patented method outlines a process that includes providing two dummy gate electrodes situated between a pair of spacers and positioning a source/drain region between these electrodes. Furthermore, it describes the formation of a first nitride layer over these components, ensuring that the upper surfaces of the nitride layer are coplanar with the dummy gate electrodes.

Career Highlights

Currently, Wang operates as an integral member of GlobalFoundries Inc., a prominent player in the semiconductor industry that focuses on advanced manufacturing technologies. His expertise and innovative spirit drive the development of cutting-edge solutions within the company.

Collaborations

Wang collaborates closely with notable colleagues such as Hong Yu and Yongsik Moon. Their teamwork fosters an environment of creativity and technical excellence, allowing them to tackle complex challenges in semiconductor fabrication.

Conclusion

Wang Haiting's contributions to the field of semiconductor technology through his innovative patent exemplify the spirit of invention that drives progress in modern manufacturing. His work at GlobalFoundries Inc., alongside his skilled colleagues, continues to push the boundaries of technology, paving the way for advancements in device fabrication.