The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 24, 2015
Filed:
Aug. 28, 2012
Hong Yu, Rexford, NY (US);
Wang Haiting, Clifton Park, NY (US);
Yongsik Moon, Menands, NY (US);
James Lee, Mechanicville, NY (US);
Huang Liu, Halfmoon, NY (US);
Hong Yu, Rexford, NY (US);
Wang Haiting, Clifton Park, NY (US);
Yongsik Moon, Menands, NY (US);
James Lee, Mechanicville, NY (US);
Huang Liu, Halfmoon, NY (US);
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Abstract
A method for enabling fabrication of RMG devices having a low gate height variation and a substantially planar topography and resulting device are disclosed. Embodiments include: providing on a substrate two dummy gate electrodes, each between a pair of spacers; providing a source/drain region between the two dummy gate electrodes; and forming a first nitride layer over the two dummy gate electrodes and the source/drain region, wherein the first nitride layer comprises a first portion over the dummy gate electrodes and a second portion over the source/drain region, and the second portion has an upper surface substantially coplanar with an upper surface of the dummy gate electrodes.