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For the Inventor, By the Inventor

Gyeonggi, South Korea

Wang-Chul Shin

This inventor holds 4 USPTO granted patents. Top assignee: Samsung Electronics Co., Ltd.. Active years: 1999-2008.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Wang-Chul Shin. Retrieved from https://idiyas.com/inventor/wang-chul-shin-t2ht1xp1

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 4

% Patents Active = 75.0

Average Co-Inventor Count = 3.4

ph-index = 3

Forward Citations = 83(Granted Patents)


Location History:

  • Yongin-kun, KR (1999)
  • Kyunggi-do, KR (2004 - 2006)
  • Osan si, KR (2008)

Company Filing History:

goldMedal4 out of 132,108 
 
Samsung Electronics Co., Ltd.
 patents

Years Active: 1999-2008

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4 patents (USPTO):Explore Patents
1. 7391082 - Semiconductor integrated circuit having resistor (2008-06-24),
2. 7084030 - Method of forming a non-volatile memory device having floating trap type memory cell (2006-08-01),
3. 6781193 - Non-volatile memory device having floating trap type memory cell and method of forming the same (2004-08-24),
4. 5936887 - Non-volatile memory device with NAND type cell structure (1999-08-10),

Title: Innovations of Wang-Chul Shin

Introduction

Wang-Chul Shin is a prominent inventor based in Kyunggi-do, South Korea. He has made significant contributions to the field of semiconductor technology, holding a total of 4 patents. His work focuses on enhancing the performance and efficiency of integrated circuits and memory devices.

Latest Patents

One of his latest patents is for a semiconductor integrated circuit having a resistor. This innovation involves a resistor formed by a series connection of one element with a positive temperature coefficient and another with a negative temperature coefficient. Another notable patent is for a method of forming a non-volatile memory device that features a floating trap type memory cell. This device includes a cell region with a memory gate pattern and a charge storage layer, along with a peripheral region that has high-voltage and low-voltage gate patterns, as well as a resistor pattern.

Career Highlights

Wang-Chul Shin is currently employed at Samsung Electronics Co., Ltd., where he continues to push the boundaries of semiconductor technology. His work has been instrumental in developing advanced memory devices that are crucial for modern electronics.

Collaborations

He has collaborated with notable colleagues such as Jung-Dal Choi and Chang-Hyun Lee, contributing to various innovative projects within the company.

Conclusion

Wang-Chul Shin's contributions to semiconductor technology and memory devices highlight his role as a key inventor in the industry. His patents reflect a commitment to innovation and excellence in engineering.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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