Company Filing History:
Years Active: 2021-2023
Title: Innovations of Wang Cai in Phase Change Memory Technology
Introduction
Wang Cai is a prominent inventor based in Hubei, China, known for his contributions to the field of microelectronic devices and memories. With a total of 2 patents, he has made significant advancements in the technology of phase change memory.
Latest Patents
Wang Cai's latest patents include a three-dimensional stacked phase change memory and its preparation method. This invention focuses on creating a multilayer structure where horizontal electrode layers and insulating layers are alternately stacked. The preparation method involves etching to form trenches and separated three-dimensional strip electrodes. The trenches are filled with an insulating medium, and small holes are formed at the boundary region between the three-dimensional strip electrodes and the insulating medium. Subsequently, a phase change material is deposited on the walls of the small holes, and the holes are filled with an electrode material to prepare vertical electrodes. This innovative approach allows for the establishment of a three-dimensional phase change memory array using a vertical electrode structure.
Career Highlights
Wang Cai is affiliated with Huazhong University of Science and Technology, where he continues to push the boundaries of research in microelectronics. His work has garnered attention for its potential applications in advanced memory technologies.
Collaborations
Wang Cai collaborates with notable colleagues, including Hao Tong and Xiangshui Miao, contributing to a dynamic research environment that fosters innovation.
Conclusion
Wang Cai's contributions to the field of phase change memory technology exemplify the importance of innovation in microelectronics. His patents reflect a commitment to advancing memory technology, paving the way for future developments in the industry.