Walter W Kocon

Title: Walter W. Kocon: Innovator in Sub-Micron Metallization Processes

Introduction

Walter W. Kocon is a notable inventor based in Wappingers Falls, NY (US). He holds a patent that significantly advances the field of sub-micron metallization. His innovative approach utilizes a low pressure and low power process, which is essential for the efficient etching of metallization layers.

Latest Patents

Walter W. Kocon's patent focuses on a low pressure and low power C1.sub.2 /HCl process for sub-micron metal reactive ion etching (RIE). This process is achieved by creating a transformer coupled plasma with power applied to electrodes positioned both above and below a substrate with metallization. The method allows for the etching of three-layer metallizations, which include bulk aluminum or aluminum alloy sandwiched between barrier layers made from materials such as Ti/TiN. The etching process is conducted in three steps, utilizing varying quantities of Cl.sub.2 during the etching of different layers. The controlled ratio of etchants and inert gases results in a thin side wall layer of reaction byproducts, enhancing the isotropic nature of the etch and ensuring defect-free side walls for submicron metallization lines. Additionally, hydrogen can be added to the plasma to reduce corrosion.

Career Highlights

Walter W. Kocon has had a distinguished career, working with prominent companies such as IBM and Kabushiki Kaisha Toshiba. His contributions to the field of metallization processes have been recognized and valued in the industry.

Collaborations

Walter has collaborated with notable professionals, including Munir D. Naeem and Masaki Narita, further enriching his work and contributions to the field.

Conclusion

Walter W. Kocon's innovative patent and career achievements highlight his significant impact on sub-micron metallization processes. His work continues to influence advancements in the field, showcasing the importance of innovation in technology.