Walter D Eisenhower, Jr

Title: Walter D Eisenhower, Jr: Innovator in Integrated Circuit Technology

Introduction

Walter D Eisenhower, Jr. is a notable inventor based in Richardson, PA (US). He has made significant contributions to the field of integrated circuit technology, particularly through his innovative patent.

Latest Patents

Eisenhower holds a patent for a Stable N-channel MOS structure. This N-channel MOS integrated circuit device features a composite metal gate structure that enhances temperature stability. The design incorporates a polysilicon layer that separates the conventional metal gate from the underlying gate oxide. This configuration not only improves the temperature stability of the integrated circuit but is also applicable in read-only memory (ROM) applications. Notably, the polysilicon layer is formed without the need for additional photolithographic steps, streamlining the manufacturing process.

Career Highlights

Walter D Eisenhower, Jr. has worked at Mos Technology, Inc., where he has been instrumental in advancing integrated circuit designs. His work has contributed to the development of more reliable and efficient electronic devices.

Collaborations

Eisenhower has collaborated with notable coworkers such as John O Paivinen and Ernest R Helfrich, contributing to various projects within the field of integrated circuits.

Conclusion

Walter D Eisenhower, Jr. is a distinguished inventor whose work in integrated circuit technology has had a lasting impact on the industry. His innovative approaches continue to influence advancements in electronic devices.