Mos Technology, Inc.

Walter D Eisenhower, Jr

John O Paivinen

Ernest R Helfrich

An N-channel MOS integrated circuit device having a composite metal gate structure which has improved temperature stability. The gate structure uses a polysilicon layer to separate the conventional metal gate from the conventional underlying gate oxide. The metal gate and the polysilicon layer extend laterally at least to the lateral extent of the gate region. This composite metal gate structure improves the temperature stability of the IC, and may be used, for example, in read-only memory (ROM) applications. The polysilicon layer is formed without additional photolithographic steps.

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Richardson, PA, United States of America

Walter D Eisenhower, Jr