Walter D Eisenhower

Title: Walter D. Eisenhower: Innovator in Integrated Circuit Technology

Introduction

Walter D. Eisenhower is a notable inventor based in Audubon, PA (US). He has made significant contributions to the field of integrated circuits, particularly in the development of N-channel MOS devices. With a total of 2 patents, his work has had a lasting impact on the technology industry.

Latest Patents

Eisenhower's latest patents focus on improving the field inversion properties of integrated circuits that incorporate N-channel MOS devices. His innovative approach involves using a silicon substrate with a low bulk dopant concentration, while maintaining a high local dopant concentration at the field surfaces under the field oxide. This differential doping is achieved through nonselective ion implantation of boron, which forms a uniform low resistivity layer. Selected portions of this layer are then removed to expose the unimplanted, high resistivity substrate, allowing for the formation of active devices. Additionally, the unimplanted surface can be doped to an intermediate concentration to enhance performance. This invention enables the use of cost-effective, low dopant concentration substrates for the efficient manufacturing of high-performance N-channel MOS integrated circuits.

Career Highlights

Walter D. Eisenhower has been associated with Mos Technology, Inc., where he has applied his expertise in semiconductor technology. His work has contributed to advancements in integrated circuit design and manufacturing processes.

Collaborations

Eisenhower has collaborated with John O. Paivinen, working together to push the boundaries of integrated circuit technology.

Conclusion

Walter D. Eisenhower's contributions to the field of integrated circuits demonstrate his innovative spirit and technical expertise. His patents reflect a commitment to improving technology and making it more accessible.