Wallace T Anderson, Jr

Title: Wallace T. Anderson, Jr.: Innovator in Gallium Arsenide Technology

Introduction

Wallace T. Anderson, Jr. is a notable inventor based in Huntington Beach, CA (US). He has made significant contributions to the field of semiconductor technology, particularly in the epitaxial growth of gallium arsenide layers. His innovative work has led to the development of a patented process that enhances the quality and efficiency of gallium arsenide production.

Latest Patents

Anderson holds a patent for a process that epitaxially grows a gallium arsenide layer with reduced contaminants. This process involves decomposing arsine to form arsenic and chemically reacting gallium with hydrogen chloride to produce gallium chloride. The gallium chloride then reacts with arsenic to form gallium arsenide on a substrate. The method also includes a unique approach to minimize silicon contamination during the growth process, ensuring a higher quality product. He has 1 patent to his name.

Career Highlights

Anderson has worked with Trw Limited, where he has applied his expertise in semiconductor technology. His work has been instrumental in advancing the methods used in the production of gallium arsenide, which is crucial for various electronic applications. His innovative techniques have contributed to the efficiency and effectiveness of semiconductor manufacturing.

Collaborations

Throughout his career, Anderson has collaborated with notable colleagues, including Thomas G. Mills and Arthur D. Herbig. These collaborations have fostered an environment of innovation and have led to advancements in the field of semiconductor technology.

Conclusion

Wallace T. Anderson, Jr. is a distinguished inventor whose work in gallium arsenide technology has made a lasting impact on the semiconductor industry. His patented process demonstrates his commitment to innovation and excellence in this critical field.