Wai-Jyh Chang

Title: Innovations of Wai-Jyh Chang in Silicon Oxide Treatment

Introduction

Wai-Jyh Chang is a notable inventor based in Tainan, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the treatment of silicon oxides. His work focuses on improving the electrical properties of doped silicon oxides, which are crucial in the fabrication of integrated circuits.

Latest Patents

Wai-Jyh Chang holds a patent for a method of surface treatment that enhances the electrical properties of doped silicon oxides (SiO2) films. The patent describes a simple two-step hydrogen fluoride (HF) etching process that effectively removes native oxides and reduces surface microroughness. This process is essential for achieving a native-oxide-free and H-passivated silicon surface, which ensures high breakdown fields, high charge-to-breakdown, and low leakage currents. The invention has demonstrated an 18% increase in breakdown field and a 33% reduction in interface trap density, making it a valuable advancement for future ultra-large-scale integration (ULSI) processes.

Career Highlights

Wai-Jyh Chang is affiliated with the National Science Council, where he continues to engage in research and development in semiconductor technologies. His innovative approach to surface treatment has positioned him as a key figure in the field, contributing to advancements that benefit the semiconductor industry.

Collaborations

Wai-Jyh Chang has collaborated with notable colleagues, including Mau-Phon Houng and Yeong-Her Wang. Their combined expertise has furthered the development of effective methods for improving silicon oxide quality.

Conclusion

Wai-Jyh Chang's contributions to the field of semiconductor technology, particularly through his patented methods for treating silicon oxides, highlight his role as an influential inventor. His work not only enhances the performance of integrated circuits but also paves the way for future innovations in the industry.