W Mark Carter

Title: W Mark Carter: Innovator in Polysilicon Diffusion Doping

Introduction

W Mark Carter is a distinguished inventor based in Austin, TX, known for his significant contributions to the semiconductor industry. With one patent to his name, Carter has made strides in the field of materials science, specifically through his innovative method for doping polysilicon layers.

Latest Patents

Carter's patent, titled "Polysilicon diffusion doping method employing a deposited doped oxide," addresses the challenges of achieving uniform doping in polysilicon layers. The invention employs a dopant-rich oxide layer to ensure a highly uniform distribution of dopant atoms, enabling average resistance values of 60 ohms with an impressive non-uniformity of only 5 percent. This is accomplished through a carefully controlled deposition process using phosphosilicate glass, which serves as a source of dopant atoms during temperature-driven diffusion.

Career Highlights

W Mark Carter is associated with Advanced Micro Devices Corporation (AMD), where he leverages his expertise to develop cutting-edge technologies in the semiconductor domain. His work on polysilicon doping methods represents a significant advancement, improving electrical resistivity and ultimately enhancing device performance.

Collaborations

Throughout his career, Carter has collaborated with notable coworkers, including Allen Lewis Evans and John G Zvonar. Together, they have fostered innovations that have contributed to the growth and development of semiconductor technologies at AMD.

Conclusion

W Mark Carter's inventive spirit and commitment to quality in semiconductor technology are evident in his patent for polysilicon diffusion doping methods. His contributions not only highlight his personal achievements but also represent broader advancements in the field, benefiting both industry and technology alike.