Moscow, Russia

Vladimir Semenovich Abramov

USPTO Granted Patents = 8 

 


Average Co-Inventor Count = 4.7

ph-index = 4

Forward Citations = 35(Granted Patents)


Company Filing History:


Years Active: 2002-2013

Loading Chart...
Loading Chart...
Loading Chart...
8 patents (USPTO):Explore Patents

Title: Vladimir Semenovich Abramov: Innovator in Semiconductor Technology

Introduction

Vladimir Semenovich Abramov is a prominent inventor based in Moscow, Russia. He has made significant contributions to the field of semiconductor technology, particularly in the development of heterostructures based on gallium nitride. With a total of 8 patents to his name, Abramov's work has had a substantial impact on the industry.

Latest Patents

Among his latest patents is a method for growing semiconductor heterostructures based on gallium nitride. This innovative method focuses on creating non-polar epitaxial heterostructures for light-emitting diodes that produce white emission and lasers. The process involves vapor-phase deposition of one or multiple heterostructure layers described by the formula AlGaN (0

Career Highlights

Throughout his career, Abramov has worked with various companies, including Klamath Falls, Inc. and Seoul Semiconductor Co., Ltd. His expertise in semiconductor technology has positioned him as a valuable asset in these organizations.

Collaborations

Abramov has collaborated with notable individuals in his field, including Oleg Abramov and Valeriy Petrovich Sushkov. These partnerships have further enhanced his contributions to semiconductor innovations.

Conclusion

Vladimir Semenovich Abramov is a distinguished inventor whose work in semiconductor technology continues to influence the industry. His innovative methods and collaborations highlight his commitment to advancing this critical field.

This text is generated by artificial intelligence and may not be accurate.
Please report any incorrect information to support@idiyas.com
Loading…