The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 08, 2012
Filed:
Jul. 14, 2011
Vladimir Semenovich Abramov, Moscow, RU;
Naum Petrovich Soshchin, Fryazino, RU;
Valeriy Petrovich Sushkov, Moscow, RU;
Nikolay Valentinovich Shcherbakov, Moscow, RU;
Vladimir Vladimirovich Alenkov, Podolsk, RU;
Sergei Aleksandrovich Sakharov, Moscow, RU;
Vladimir Aleksandrovich Gorbylev, Moscow, RU;
Vladimir Semenovich Abramov, Moscow, RU;
Naum Petrovich Soshchin, Fryazino, RU;
Valeriy Petrovich Sushkov, Moscow, RU;
Nikolay Valentinovich Shcherbakov, Moscow, RU;
Vladimir Vladimirovich Alenkov, Podolsk, RU;
Sergei Aleksandrovich Sakharov, Moscow, RU;
Vladimir Aleksandrovich Gorbylev, Moscow, RU;
Seoul Semiconductor Co., Ltd., Seoul, KR;
Vladimir Semenovich Abramov, Moscow, RU;
Abstract
The method of growing non-polar epitaxial heterostructures for light-emitting diodes producing white emission and lasers, on the basis of compounds and alloys in AlGaInN system, comprising the step of vapor-phase deposition of one or multiple heterostructures layers described by the formula AlGaN (0<x≦1), wherein the step of growing AN structures using (a)-langasite (LaGaSiO) substrates is applied for the purposes of reducing the density of defects and mechanical stresses in heterostructures.