Location History:
- Moskovskaya, RU (2011)
- Fryazino, RU (2012 - 2013)
Company Filing History:
3 out of 600 
1 out of 1 
1 out of 832,880 Years Active: 2011-2013
Title: Naum Petrovich Soshchin: Innovator in Semiconductor Technology
Introduction
Naum Petrovich Soshchin is a notable inventor based in Fryazino, Russia. He has made significant contributions to the field of semiconductor technology, particularly in the development of heterostructures based on gallium nitride. With a total of 3 patents to his name, Soshchin's work has advanced the capabilities of light-emitting diodes and laser technologies.
Latest Patents
Soshchin's latest patents include a method for growing non-polar epitaxial heterostructures for light-emitting diodes that produce white emission and lasers. This method utilizes compounds and alloys in the AlGaInN system and involves vapor-phase deposition of one or multiple heterostructure layers described by the formula AlGaN (0 Career Highlights Throughout his career, Soshchin has worked with various companies, including Seoul Semiconductor Co., Ltd. His expertise in semiconductor technology has positioned him as a valuable contributor to the industry. His innovative approaches have led to advancements that benefit both commercial and research applications. Collaborations Soshchin has collaborated with notable professionals in his field, including Vladimir Semenovich Abramov and Valeriy Petrovich Sushkov. These collaborations have further enriched his work and contributed to the development of cutting-edge technologies. Conclusion Naum Petrovich Soshchin's contributions to semiconductor technology exemplify the impact of innovation in modern electronics. His patents and collaborative efforts continue to influence the industry, paving the way for future advancements.