Yekaterinburg, Russia

Vladimir S Parshin

This inventor holds 1 USPTO granted patent. Top assignee: Other. Active years: 1992.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Vladimir S Parshin. Retrieved from https://idiyas.com/inventor/vladimir-s-parshin

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 17.0

ph-index = 1

Forward Citations = 150(Granted Patents)


Company Filing History:

goldMedal1 out of 834,658 
Other
 patents

Years Active: 1992

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1 patent (USPTO):Explore Patents

Title: Vladimir S Parshin: Innovator in Well Technology

Introduction

Vladimir S Parshin is a notable inventor based in Yekaterinburg, Russia. He has made significant contributions to the field of well technology, particularly with his innovative solutions for addressing troublesome zones in wells. His work has garnered attention for its practical applications in the industry.

Latest Patents

Vladimir holds 1 patent for his invention titled "Arrangement for patching off troublesome zones in a well." This patent showcases his expertise in developing effective methods to enhance well integrity and performance.

Career Highlights

Throughout his career, Vladimir has demonstrated a commitment to innovation and problem-solving in the field of well technology. His work has not only contributed to advancements in the industry but has also paved the way for future research and development.

Collaborations

Vladimir has collaborated with talented individuals such as Alexandr A Puzanov and Gabdrashit S Abdrakhmanov. These partnerships have enriched his work and fostered a collaborative environment for innovation.

Conclusion

Vladimir S Parshin is a distinguished inventor whose contributions to well technology are noteworthy. His patent and collaborations reflect his dedication to advancing the field and addressing industry challenges.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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