Hohen Neuendorf, Germany

Vladimir Kaganer

This inventor holds 1 USPTO granted patent. Top assignee: Forschungsverbund Berlin E.v.. Active years: 2015.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Vladimir Kaganer. Retrieved from https://idiyas.com/inventor/vladimir-kaganer

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 6(Granted Patents)


Company Filing History:


Years Active: 2015

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1 patent (USPTO):Explore Patents

Title: Vladimir Kaganer: Innovator in Semiconductor Technology

Introduction

Vladimir Kaganer is a notable inventor based in Hohen Neuendorf, Germany. He has made significant contributions to the field of semiconductor technology, particularly through his innovative methods for producing semiconductor devices.

Latest Patents

Kaganer holds a patent for the "Production of a semiconductor device having at least one column-shaped or wall-shaped semiconductor element." This patent describes a method for creating a semiconductor device that features at least one column-shaped or wall-shaped semiconductor element extending in a main direction. The method involves forming sections of different crystal types on a substrate, which allows for unique lattice strain characteristics that enhance the performance of the semiconductor device.

Career Highlights

Kaganer is associated with Forschungsverbund Berlin e.V., where he continues to advance research in semiconductor technologies. His work has been instrumental in developing methods that improve the efficiency and functionality of semiconductor devices.

Collaborations

Kaganer has collaborated with notable colleagues such as Oliver Brandt and Lutz Geelhaar, contributing to various projects that push the boundaries of semiconductor research.

Conclusion

Vladimir Kaganer is a prominent figure in the semiconductor industry, with a focus on innovative production methods that enhance device performance. His contributions continue to shape the future of semiconductor technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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