Vladimir Ivanovich Kurinny

Title: Vladimir Ivanovich Kurinny: Innovator in Semiconductor Technology

Introduction

Vladimir Ivanovich Kurinny is a notable inventor based in Moscow, Russia. He has made significant contributions to the field of semiconductor technology, holding a total of 3 patents. His work focuses on innovative methods for manufacturing semiconductor devices, which are crucial for modern electronics.

Latest Patents

Kurinny's latest patents include a method for manufacturing a semiconductor display device. This method employs a silicon carbide crystal with specific ohmic contacts and regions of opposite types of conductivity. The process involves bombarding the p-type region with ions of an inert gas to create an additional region with structure defects. Another significant patent is for producing a semiconductor matrix of light-emitting elements. This method involves applying a mask onto an n-layer of an epitaxial structure and introducing an acceptor addition through ion implantation, followed by diffusion heat treatment.

Career Highlights

Throughout his career, Kurinny has demonstrated a commitment to advancing semiconductor technology. His innovative approaches have paved the way for improved manufacturing processes in the industry. His expertise in semiconductor materials and methods has positioned him as a valuable contributor to the field.

Collaborations

Kurinny has collaborated with several professionals in his field, including Tatyana Georgievna Kmita and Vladimir Vasilievich Judin. These collaborations have fostered a productive environment for innovation and development in semiconductor technologies.

Conclusion

Vladimir Ivanovich Kurinny is a distinguished inventor whose work in semiconductor technology has led to significant advancements. His patents reflect a deep understanding of materials and processes that are essential for the future of electronics.